《微电子专业英语》的教学对象是微电子专业的高职高专学生。先导课程有“半导体器件物理基础”、“微电子概论”、“微电子工艺”、“集成电路设计”，经过这些课程的学习，学生应该已经具备一定的专业知识并能较好地进行微电子专业英语的学习。《微电子专业英语》共分为六章。**章为History，第二章为Chip，第三章为Technology，第四章为Encapsulation &resting，第五章为Equipment，第六章为Business writing。*后还介绍了简历及论文摘要的撰写方法，让学生对本行业的专业英语有个全面的认识。建议本课程的授课时数为32～64学时。其他专业的读者也可通过对《微电子专业英语》的学习对微电子专业有所了解，既学习了英语。又开阔了知识面。

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插图：The Development of FairchildBy the end of 1960, Fairchild Semiconductor employed 1550 employees. Thanks to Ed Bald-win, Fairchild had a state-of-the-art new facility completed in August 1959 and expanded in 1960,with total area of 108,000 sq. ft. at 545 Whisman Road in Mountain View. The facility in San Rafael had about 55,000 sq. ft. and the facility in Palo Alto had 56-,O00'sq. ft. The major problemwas to find a qualified labor force. At that time Fairchild Semiconductor was hiring almost indiscriminately.The company was growing significantly, and as always, the growth brings problems. Transfer from the development facility in Palo Alto to manufacturing facilities was slow and difficult, and management needed to solve many problems which may be tougher than technical ones. For example,in December 1960, Eugene Kleiner asked Gordon Moore to solve a problem when the staff in Palo Altowas accusing people from Mountain View of taking Palo Alto's supplies of paper and pencils. When Charles E. Sporck arrived as a new Production Manager in October 1959, he noticed that Fairchild had "no structured manufacturing organization". The Fairchild Research and Developmentwas in the same situation. At the end of 1959, Gordon Moore ran the Chemistry Section with Bernard Rabinovitch （surface characterization）, Worden Waring （packaging）, Paul Ignacz （electro-chemical） and Bernard Yurash （analytical services）. In the Physics Section were C.T. Sah, D.A.Tremere （ tunnel diode）, B.D. James and Fred Schulenberger （ Aluminum Alloying）, Otto Leisti-ko, A. P. Halle （ vacuum deposition of SiO （ not SiO2 ！ ）, TomBurke and Phillip S. Flint （ mesatransistor）, O.V. Hatcher （low capacitance diode）, C.A. Lasch, E. W.OKeefe （diffusion aridfurnace operation）, Sheldon Roberts and L. Lynn （material research）. The members of the transistor Development Sections were M. Weissenstern, S. Levine, Garry Parker, R. Brown, P.James, R. Craig, Dave Allison and B. Bently. Victor H. Grinich was running the Engineering Department and the Device and Reliability Evaluation Department. After Ed Baldwin's defection, BobNoyce became the General Manager and Vice-President. Julius Blank was running Fairchild Fgcili-ty, and Eugene Kleiner was running business operations in the Mountain View Facility. Jay Last and Jean Hoerni were in the company's shadow. Jay was working on the parametric diode and integratedcircuits and Jean was preoccupied with production of planar devices in Mountain View.

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