微电子专业英语 本书特色
《微电子专业英语》是高职高专“十二五”电子信息类专业规划教材(微电子技术专业)。
微电子专业英语 目录
前言Chapter I HistoryUnit 1A．TextThe First Transistor inFairchildB．ReadingThe Planar TransistorC．Extracurricular Knowledge The Development ofFairchild Unit 2A．TextThe History of Logic CircuitB．ReadingThe Challenge of FairchildC．Extracurricular KnowledgeThe Management of FairchildUnit 3 A．TextThe Achievement of WanlassB．ReadingWanlass and MooreC．Extracurricular KnowledgeThe Thermal Oxides of MOSTransistors Chapter Ⅱ ChipUnit 1 A．TextLM74 1 Operational AmplifierB．ReadingBeginners and BystandersArticleC．Extracurricular Knowledge1941：First(Vacuum Tube)Op-amp1947：First Op-amp with anExplicit Non-inverting Input1 948：First Chopper-stabilizedOp-ampUnit 2 A．TextDM74LSl38·DM74LSl39Decoder／DemuhiplexerB．ReadingAnalog Chip C．Extracurricular KnowledgeCortex Chip Goes Both WaysUnit 3 A．TextLow-Power，8-Channel，Serial10．Bit ADCPseudo-Differential InputTrack／HoldB．ReadingAnalog／Digital Converter TechnologyDevelopment TrendsC．Extracurricular KnowledgeA／D Converters，the Comparisonand ClassificationChapter Ⅲ TechnologyUnit 1 A．TextIon Implantation Processes in Semiconductor Manufacturing Monte．Carlo Method for Simulation of Ion ImplantationB．ReadingWet Etching of Silicon DioxideC．Extracurricular Knowledge SiGe TechnologyUnit 2 A．TextThermal OxidafonB．ReadingSingle Crystal Growing for WaferProductionC．Extracurricular KnowledgeTestTest LinksChapter IV Encapsulation &TestingUnit 1 A．TextAssembly and Packaging B．ReadingSome Different Kinds of PackageTechniqueC．Extracurricular KnowledgePackaging For SpecializedFunctions Unit 2 A．TextAdvanced Packaging ElementsB．ReadingThe Equipment of Assembly andPackagingC．Extracurricular KnowledgeDesignInterconnect RF／AMS WirelessEnvironment．Safety&HealthModeling& SimulationTestOther ExpressionsChapter V EquipmentUnit 1 A．TextSemiconductor Wafer FabricationEquipmentEpitaxial ReactorsOxidation SystemsDiffusion Systems Ion Implantation EquipmentPhysical Vapor DepositionSystemsChemical Vapor DepositionSystemsPhotolithography EquipmentEtching EquipmentB．ReadingThe LPCVD ModelDevelopmentC．Extracurricular KnowledgeOptical Proximity CorrectionUnit 2 A．TextSemiconductor Packaging／AssemblyEquipmentB．ReadingScheduling Semiconductor WaferFabricationC．Extracurricular KnowledgeUnit 3 A．TextCMP EquipmentB．ReadingSurface．Mount TechnologyC．Extracurricular KnowledgeCMP ProcessUnit 4 A．Text．Basic Structure of IonImplanter Ion Implanter Types*B．ReadingIon Implanter ConceptsC．Extracurricular KnowledgeHigh Current Implanter 200keVSeries 1090 Technical DescriptionChapterⅥ Business WritingUnit 1A．FextFhesis AbstractB．ReadingAbstractC．Extracurricular Knowledge Defining the Research PaperUnit 2A． TextHow to Write a Resume& CoverLetter B．ReadingHow to Write Resume inEnglishC．Extracurricular Knowledge Appendix 部分参考译文及练习答案**章 历史**单元A．课文仙童公司的**只晶体管B．阅读第二单元A．课文逻辑电路的历史B．阅读第三单元A．课文Wanlass的收获B．阅读第二章 芯片**单元A．课文LM741运算放大器B．阅读第二单元A．课文DM74LSl38·DM74LSl39译码器／多路输出选择器B．阅读．第三单元A．课文低功耗、8通道、串行10位ADC．伪差分输入采样／保持B．阅读第三章 工艺**单元A．课文半导体制造过程中的离子注入工艺蒙特卡罗法模拟离子注入B．阅读第二单元A．课文热氧化B．阅读第四章 封装与测试**单元A．课文组装与封装B．阅读第二单元A．课文先进的封装因素B．阅读第五章 设备**单元A．课文半导体晶圆制造设备外延反应设备氧化系统扩散系统离子注入系统物理气相淀积系统化学气相淀积系统光刻设备刻蚀设备B．阅读第二单元A．课文半导体封装设备B．阅读第三单元A．课文化学机械平坦化设备B．阅读第四单元A．课文离子注入机的基本结构离子注人机类型B．阅读第六章 应用文**单元A．课文论文摘要B．阅读第二单元A．课文如何撰写简历及自荐信B．阅读参考文献
微电子专业英语 节选
《微电子专业英语》的教学对象是微电子专业的高职高专学生。先导课程有“半导体器件物理基础”、“微电子概论”、“微电子工艺”、“集成电路设计”，经过这些课程的学习，学生应该已经具备一定的专业知识并能较好地进行微电子专业英语的学习。《微电子专业英语》共分为六章。**章为History，第二章为Chip，第三章为Technology，第四章为Encapsulation &resting，第五章为Equipment，第六章为Business writing。*后还介绍了简历及论文摘要的撰写方法，让学生对本行业的专业英语有个全面的认识。建议本课程的授课时数为32～64学时。其他专业的读者也可通过对《微电子专业英语》的学习对微电子专业有所了解，既学习了英语。又开阔了知识面。
微电子专业英语 相关资料
插图：The Development of FairchildBy the end of 1960, Fairchild Semiconductor employed 1550 employees. Thanks to Ed Bald-win, Fairchild had a state-of-the-art new facility completed in August 1959 and expanded in 1960,with total area of 108,000 sq. ft. at 545 Whisman Road in Mountain View. The facility in San Rafael had about 55,000 sq. ft. and the facility in Palo Alto had 56-,O00'sq. ft. The major problemwas to find a qualified labor force. At that time Fairchild Semiconductor was hiring almost indiscriminately.The company was growing significantly, and as always, the growth brings problems. Transfer from the development facility in Palo Alto to manufacturing facilities was slow and difficult, and management needed to solve many problems which may be tougher than technical ones. For example,in December 1960, Eugene Kleiner asked Gordon Moore to solve a problem when the staff in Palo Altowas accusing people from Mountain View of taking Palo Alto's supplies of paper and pencils. When Charles E. Sporck arrived as a new Production Manager in October 1959, he noticed that Fairchild had "no structured manufacturing organization". The Fairchild Research and Developmentwas in the same situation. At the end of 1959, Gordon Moore ran the Chemistry Section with Bernard Rabinovitch （surface characterization）, Worden Waring （packaging）, Paul Ignacz （electro-chemical） and Bernard Yurash （analytical services）. In the Physics Section were C.T. Sah, D.A.Tremere （ tunnel diode）, B.D. James and Fred Schulenberger （ Aluminum Alloying）, Otto Leisti-ko, A. P. Halle （ vacuum deposition of SiO （ not SiO2 ！ ）, TomBurke and Phillip S. Flint （ mesatransistor）, O.V. Hatcher （low capacitance diode）, C.A. Lasch, E. W.OKeefe （diffusion aridfurnace operation）, Sheldon Roberts and L. Lynn （material research）. The members of the transistor Development Sections were M. Weissenstern, S. Levine, Garry Parker, R. Brown, P.James, R. Craig, Dave Allison and B. Bently. Victor H. Grinich was running the Engineering Department and the Device and Reliability Evaluation Department. After Ed Baldwin's defection, BobNoyce became the General Manager and Vice-President. Julius Blank was running Fairchild Fgcili-ty, and Eugene Kleiner was running business operations in the Mountain View Facility. Jay Last and Jean Hoerni were in the company's shadow. Jay was working on the parametric diode and integratedcircuits and Jean was preoccupied with production of planar devices in Mountain View.
